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US 7,037,371 B1Granted
Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShin Hashimoto, Takenobu Kishida, Kyoko Egashira, Yoshifumi Hata, Toru Nishiwaki, Tomoya Tanaka
Life of this patent
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Abstract
After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film.
Claims16
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), removing said compound layer;
- (d) after the step (c), depositing a metal film on said semiconductor layer;
- and
- (e) after the step (d), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a dosage of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
5 more elements
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil and removing said compound layer by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), depositing a metal film on said semiconductor layer;
- and
- (d) after the step (c), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a dosage of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
4 more elements
A method for fabricating a semiconductor device comprising the steps of:
- distributing an oxygen element in a region in the vicinity of a surface portion of a semiconductor layer;
- depositing a metal film on said semiconductor layer;
- and
- epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film;
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer;
- and
- a dosage of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
4 more elements
A method for fabricating a semiconductor device comprising the steps of:
- distributing an oxygen element in a region in the vicinity of a surface portion of a semiconductor layer;
- depositing a metal film on said semiconductor layer;
- and
- epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film;
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a distribution of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
3 more elements
A method for fabricating a semiconductor device comprising the steps of:
- distributing an oxygen element in a region in the vicinity of a surface portion of a semiconductor layer;
- depositing a metal film on said semiconductor layer;
- and
- epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film;
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a concentration of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
3 more elements
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), removing said compound layer;
- (d) after the step (c), depositing a metal film on said semiconductor layer;
- and
- (e) after the step (d), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a distribution of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
5 more elements
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), removing said compound layer;
- (d) after the step (c), depositing a metal film on said semiconductor layer;
- and
- (e) after the step (d), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a concentration of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
5 more elements
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil and removing said compound layer by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), depositing a metal film on said semiconductor layer;
- and
- (d) after the step (c), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a distribution of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
4 more elements
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a compound layer including a semiconductor element and a nonmetal element on a semiconductor layer;
- (b) distributing said nonmetal element included in said compound layer in the region in the vicinity of the surface portion of said semiconductor layer through recoil and removing said compound layer by irradiating said compound layer with a particle energy beam;
- (c) after the step (b), depositing a metal film on said semiconductor layer;
- and
- (d) after the step (c), epitaxially growing a semiconductor-metal compound layer in the surface portion of said semiconductor layer by causing a reaction between an element included in said semiconductor layer and a metal included in said metal film through annealing carried out on said metal film,
- wherein said region in the vicinity of the surface portion of said semiconductor layer is within a depth of 0.5 nm to 5 nm from the surface of the semiconductor layer, and
- a concentration of said nonmetal element per unit area is between 4×1014 cm−2 and 4×1015 cm−2.
4 more elements
Dependencies are inferred from the claim text.