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AssigneeThe Board of Trustees of the Leland Stanford Jr. University
InventorsHyongsok Soh, Stephen C. Minne, Calvin F. Quate
Estimating the term…
A scanning probe microscope is used to pattern a layer of resist, and the pattern is transferred to a substrate. First, an underlayer formed of, for example, polyimide and a top layer formed of, for example, amorphous silicon are deposited on the substrate. A pattern is formed on the top layer using the tip of the cantilever in a scanning probe microscope. The pattern may consist of an oxide formed by an electric field at the cantilever tip. The top layer is then etched using the pattern as a mask and using an etchant that is selective against the underlayer. The underlayer is then etched using an etchant that is selective against the top layer and substrate. The substrate is etched with an etchant that removes the top layer but is selective against the underlayer. Finally, the underlayer is removed.
A method of etching a pattern on a semiconductor substrate, said method comprising:
A method of etching a pattern on a semiconductor substrate, said method comprising:
A method of etching a pattern on a semiconductor substrate, said method comprising:
A method of etching a pattern on a semiconductor substrate, said method comprising the following steps performed in the order stated:
A method of etching a pattern on a semiconductor substrate, said method comprising:
A method of etching a pattern on a substrate, said method comprising:
A method of etching a pattern on a substrate, said method comprising:
A method of etching a pattern on a substrate, said method comprising:
A method of etching a pattern on a substrate, said method comprising:
A method of etching a pattern on a substrate, said method comprising:
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