Y10S 148/098
Layer conversion
Y10S148/098 (Layer conversion) appears on 5 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 5
- Published applications
- 0
- Assignees
- 3
- Inventors
- 8
- Latest grant
- 16 Nov 1993
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for producing a silicate layer in an integrated circuit16 Nov 1993US 5,262,358 AFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Method for forming single crystals of silicon by use of a standing hypersonic wave26 May 1987US 4,668,331 A
- Semiconductor p-n junction solar cell and method of manufacture4 Jan 1977US 4,001,864 A
- Integrated injection logic having high inverse current gain21 Sep 1976US 3,982,266 ATexas Instruments Incorporated
- Complementary bipolar transistors having collector diffused isolation20 Jul 1976US 3,971,059 ANational Semiconductor Corporation
No published applications in this class yet.
Most cited
By later US patents
- Semiconductor p-n junction solar cell and method of manufacture91US 4,001,864 A1977
- Complementary bipolar transistors having collector diffused isolation28US 3,971,059 ANational Semiconductor Corporation · 1976
- Integrated injection logic having high inverse current gain16US 3,982,266 ATexas Instruments Incorporated · 1976
- Method for forming single crystals of silicon by use of a standing hypersonic wave10US 4,668,331 A1987
- Method for producing a silicate layer in an integrated circuit5US 5,262,358 AFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. · 1993