Method for producing a silicate layer in an integrated circuit

A method of producing a silicate layer as an intermediate oxide insulation layer in an integrated circuit for levelling topogaphic irregularities of circuit structures formed on a substrate of said integrated circuit, said method comprising the following steps:

• photo-induced polymerization of polysiloxane by means of vapor-phase reaction taking as a basis an SiO-containing or an SiC-containing organic compound together with an O.sub.2 -atmosphere and/or an N.sub.2 O-atmosphere at a first temperature and under a first pressure in a reaction chamber;
• condensing polysiloxane to produce a polysiloxane layer on the circuit structures of the integrated circuit formed on the substrate, in a condensation chamber separated from said reaction chamber;
• said substrate being adjusted to a second temperature, which is lower than said first temperature and which is so selected that the SiO-containing or SiC-containing organic compound will no longer condense under a second pressure in the condensation chamber, but that condensation of the polysiloxane on the circuit structures of the integrated circuit formed on said substrate will take place;
• and
• tempering said polysiloxane layer into the silicate layer whereby it is converted into the silicate layer.