Y10S 148/149
Silicon on iii-v
Official title: Silicon on III-V
Y10S148/149 (Silicon on iii-v) appears on 13 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 13
- Published applications
- 0
- Assignees
- 11
- Inventors
- 27
- Latest grant
- 11 Oct 1994
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of making a lattice mismatched heterostructure optical waveguide11 Oct 1994US 5,354,709 AThe United States of America as represented by the Secretary of the Air Force
- Method for manufacturing a semiconductor substrate having a compound semiconductor layer on a single-crystal silicon wafer14 Sep 1993US 5,244,830 AKorea Electronics and Telecommunications Research Institute
- Lattice mismatched hetrostructure optical waveguide10 Nov 1992US 5,163,118 AThe United States of America as represented by the Secretary of the Air Force
- Method for forming a transistor having cubic boron nitride layer14 Jan 1992US 5,081,053 AGeneral Motors Corporation
- Method of making unpinned oxide-compound semiconductor structures22 Jan 1991US 4,987,095 AInternational Business Machines Corporation
No published applications in this class yet.
Most cited
By later US patents
- Monolithic integration of silicon and gallium arsenide devices178US 4,774,205 AMassachusetts Institute of Technology · 1988
- Lattice mismatched hetrostructure optical waveguide111US 5,163,118 AThe United States of America as represented by the Secretary of the Air Force · 1992
- Method of making a lattice mismatched heterostructure optical waveguide84US 5,354,709 AThe United States of America as represented by the Secretary of the Air Force · 1994
- Ion implantation and annealing of compound semiconductor layers44US 4,863,877 AKopin Corporation · 1989
- Method for heteroepitaxial growth using tensioning layer on rear substrate surface31US 4,830,984 ATexas Instruments Incorporated · 1989