Ion implantation and annealing of compound semiconductor layers
AssigneeKopin Corporation
InventorsJohn C. C. Fan, Jhang W. Lee, Jagdish Narayan
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Abstract
A method for reducing the defect and dislocation density in III-V material layers deposited on dissimilar substrates is disclosed. The method involves ion implantation of dopant materials to create amorphous regions within the layers followed by an annealing step during which the amorphous regions are recrystallized to form substantially monocrystalline regions. The wafers produced by the process are particularly well suited for optoelectronic devices.
Claims41
A method for producing a wafer having a III-V material layer on a single crystal or substantially single crystal semiconductor substrate, the III-V material layer being of a material different than that of the substrate, said method comprising:
- a. epitaxially depositing the layer of III-V material on the single crystal or substantially single crystal semiconductor substrate;
- b. performing an ion implantation into the layer of III-V material to form an amorphous region in the layer of III-V material near the surface of the substrate, but leaving substantially monocrystalline III-V material above or adjacent the amorphous region as well as near the surface of the III-V material layer;
- and
- c. annealing the wafer at a temperature substantially below the melting temperature of the III-V material to convert amorphous III-V material to monocrystalline III-V material by regrowing the III-V material from the remaining substantially crystalline III-V material region.
A method for producing a wafer having a III-V material layer on a single crystal or substantially single crystal semiconductor substrate, the III-V material layer being of a material different than that of the substrate, said method comprising:
- a. epitaxially depositing the III-V material on a surface of the single crystal or substantially single crystal semiconductor substrate, thereby forming a layered article;
- b. performing an ion implantation into the layered article to form an amorphous region extending above and below the substrate surface;
- and
- c. annealing the wafer at a temperature substantially below the melting temperature of the III-V material and the substrate to convert material in the amorphous region to monocrystalline material by regrowth from a region of substantially crystalline material.
A method for producing a wafer having a III-V material layer on a single crystal or substantially single crystal semiconductor substrate, the III-V material layer being of a material different than that of the substrate, said method comprising:
- a. epitaxially depositing the layer of III-V material on the single crystal or substantially single crystal semiconductor substrate;
- b. performing an ion implantation into selected, isolated regions of the III-V material to form isolated amorphous regions of III-V material, but leaving substantially monocrystalline III-V material adjacent the III-V material layer;
- and
- c. annealing the wafer at a temperature substantially below the melting temperature of the III-V material to convert the isolated amorphous III-V material regions to monocrystalline III-V material by regrowing the III-V material from substantially crystalline III-V material adjacent to the amorphous regions.
A method for producing a wafer having a III-V material layer on a single crystal or substantially single crystal semiconductor substrate, the III-V material layer being of a material different than that of the substrate, said method comprising:
- a. epitaxially depositing the layer of III-V material on a surface of the single crystal or substantially single crystal semiconductor substrate, thereby forming a layered article;
- b. performing an ion implantation into the surface of the III-V material to form an amorphous surface region in the III-V material, but leaving substantially monocrystalline III-V material below the amorphous region;
- and,
- c. annealing the wafer at a temperature substantially below the melting temperature of the III-V material to convert amorphous III-V material to monocrystalline III-V material by regrowing the III-V material from the substantially crystalline III-V material region.
Dependencies are inferred from the claim text.