Y10S 148/108
Melt back
Y10S148/108 (Melt back) appears on 5 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 5
- Published applications
- 0
- Assignees
- 5
- Inventors
- 7
- Latest grant
- 1 May 1990
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Substrate for high-intensity led, and method of epitaxially growing same1 May 1990US 4,921,817 AMitsubishi Kasei Corporation
- Epitaxial substrate for high-intensity led, and method of manufacturing same20 Feb 1990US 4,902,356 AMitsubishi Kasei Corporation
- Method for generating a strip waveguide4 Apr 1989US 4,818,722 ASiemens Aktiengesellschaft
- Liquid epitaxy technique15 Mar 1977US 4,012,242 AInternational Rectifier Corporation
- Semiconductor double heterostructure laser device and method of making the same28 Sep 1976US 3,983,510 ANippon Electric Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Epitaxial substrate for high-intensity led, and method of manufacturing same49US 4,902,356 AMitsubishi Kasei Corporation · 1990
- Semiconductor double heterostructure laser device and method of making the same19US 3,983,510 ANippon Electric Co., Ltd. · 1976
- Liquid epitaxy technique16US 4,012,242 AInternational Rectifier Corporation · 1977
- Method for generating a strip waveguide15US 4,818,722 ASiemens Aktiengesellschaft · 1989
- Substrate for high-intensity led, and method of epitaxially growing same3US 4,921,817 AMitsubishi Kasei Corporation · 1990