Y10S 148/169
Vacuum deposition
Official title: Vacuum deposition, e.g. including molecular beam epitaxy
Y10S148/169 (Vacuum deposition) appears on 119 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 119
- Published applications
- 1
- Assignees
- 66
- Inventors
- 263
- Latest grant
- 6 Oct 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 6 | 0 |
| 1978 | 7 | 0 |
| 1979 | 5 | 0 |
| 1980 | 6 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 5 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 21 | 0 |
| 1990 | 11 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn6 Oct 2009US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law
- Method of forming a silicon nitride layer25 May 1999US 5,907,792 AMotorola, Inc.
- Semiconductor integrated circuit using monolayer epitaxial growth18 May 1999US 5,905,297 AFujitsu Limited
- Multi-layer structure for II-VI group compound semiconductor and method for forming the same23 Feb 1999US 5,874,349 ANEC Corporation
- Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same10 Nov 1998US 5,834,361 ANEC Corporation
Most cited
By later US patents
- Method for producing compound thin films1,267US 4,058,430 A1977
- Staged-vacuum wafer processing system and method701US 5,186,718 AAPPLIED Materials.Inc. · 1993
- Method for forming a film and method for manufacturing a thin film transistor649US 5,480,818 AFujitsu Limited · 1996
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Selective deposition of amorphous and polycrystalline silicon345US 4,963,506 AMotorola, Inc. · 1990