SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
AssigneeArizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law
InventorsJohn Kouvetakis, Matthew Bauer, John Tolle
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Abstract
A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.
Claims26
A semiconductor structure comprising:
- a substrate, a SnzGe1-z layer formed over the substrate, and an essentially single-phase Ge1-x-ySixSny layer formed over the SnzGe1-z layer.
A method for synthesizing a compound having the molecular formula H3Si—GeH3, the method comprising combining H3SiO3SCF3 with KGeH3 under conditions whereby H3Si—GeH3 is obtained.
A method to prepare a semiconductor structure comprising the steps of,
- providing a substrate;
- depositing a SnzGe1-z layer over the substrate;
- and
- depositing an essentially single-phase Ge1-x-ySixSny layer over the SnzGe1-z layer.
An alloy of the formula, Ge1-x-ySixSny, wherein x is about 0.01 to about 0.25 and y is about 0.01 to about 0.11.
A semiconductor structure comprising:
- a substrate, a SnzGe1-z layer formed over the substrate, and a layer of an alloy of the formula, Ge1-x-ySixSny, wherein x is about 0.01 to about 0.25 and y is about 0.01 to about 0.11 formed over the SnzGe1-z layer.
Dependencies are inferred from the claim text.