Method of forming a silicon nitride layer
AssigneeMotorola, Inc.
InventorsRavi Droopad, Jonathan K. Abrokwah, Matthias Passlack, Zhiyi Jimmy Yu
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Abstract
A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrogen. In a preferred embodiment, a III-V compound semiconductor wafer structure is heated in an ultra high vacuum system to a temperature below the decomposition temperature of said compound semiconductor wafer structure and a silicon nitride layer is formed using a molecular beam of Si provided by either thermal evaporation or electron beam evaporation, and an atomic nitrogen beam provided by either RF or microwave plasma discharge.
Claims14
A method of forming a silicon nitride layer on a semiconductor wafer structure comprising the steps of:
- providing a semiconductor wafer structure with a surface;
- and
- forming a silicon nitride layer on the surface of semiconductor wafer structure by depositing silicon nitride onto the wafer structure using a combination molecular beam and atomic beam technique to provide constituent atoms at the surface.
A method of forming a silicon nitride layer on a compound semiconductor wafer structure comprising the steps of:
- providing a compound semiconductor wafer structure with a surface;
- and
- forming a silicon nitride layer on the surface of compound semiconductor wafer structure by depositing silicon nitride onto the wafer structure using a combination molecular beam and atomic beam technique to provide constituent atoms at the surface.
Dependencies are inferred from the claim text.