Y10S 148/053
Field effect transistors fets
Y10S148/053 (Field effect transistors fets) appears on 119 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 119
- Published applications
- 0
- Assignees
- 50
- Inventors
- 198
- Latest grant
- 11 Jul 2000
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 25 | 0 |
| 1977 | 6 | 0 |
| 1978 | 8 | 0 |
| 1979 | 10 | 0 |
| 1980 | 9 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of fabricating staggered thin film transistor with an improved ohmic contact structure11 Jul 2000US 6,087,205 ANEC Corporation
- Formation of low resistance, ultra shallow LDD junctions employing a sub-surface, non-amorphous implant11 Jul 2000US 6,087,209 AAdvanced Micro Devices, Inc.
- Process of producing thin film transistor14 Mar 2000US 6,037,195 AKabushiki Kaisha Toshiba
- Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure26 Jan 1999US 5,864,149 ANEC Corporation
- Deposition of high quality conformal silicon oxide thin films on glass substrates19 Jan 1999US 5,861,197 AAPPLIED Materials.Inc.
No published applications in this class yet.
Most cited
By later US patents
- Deep depletion insulated gate field effect transistors138US 3,958,266 ARCA Corporation · 1976
- Semiconductor devices controlled by depletion regions88US 4,698,653 A1987
- Method of fabricating a MOSFET with graded source and drain regions88US 4,728,617 AIntel Corporation · 1988
- VDMOS transistor with improved breakdown characteristics88US 5,430,316 ASGS-Thomson Microeletronics, S.r.l. · 1995
- Method of making a self-aligned MESFET using a substitutional gate with side walls86US 4,745,082 AFord Microelectronics, Inc. · 1988