Y10S 148/035
Diffusion through a layer
Y10S148/035 (Diffusion through a layer) appears on 48 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 48
- Published applications
- 0
- Assignees
- 30
- Inventors
- 71
- Latest grant
- 18 May 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 7 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device in which an increase in threshold voltage, resulting from back-gate bias effect is mitigated, and method of manufacturing the same18 May 1999US 5,905,292 AKabushiki Kaisha Toshiba
- Semiconductor device in which an increase in threshold voltage, resulting from back-gate bias effect is mitigated, and method of manufacturing the same24 Nov 1998US 5,841,175 AKabushiki Kaisha Toshiba
- Semiconductor device produced by a single furnace cycle diffusion and oxidation process28 Jul 1998US 5,786,605 ASony Corporation
- Semiconductor device and method of manufacturing the same9 Jun 1998US 5,763,953 AKabushiki Kaisha Toshiba
- Method of making a silicon based biomedical sensor2 Dec 1997US 5,693,577 ATexas Instruments Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Semiconductor device substrate and process for preparing the same329US 5,277,748 ACanon Kabushiki Kaisha · 1994
- Method of growing GaAs films on Si or GaAs substrates using ale122US 4,876,218 ANokia Corporation · 1989
- Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process119US 4,994,410 AMotorola, Inc. · 1991
- Method of manufacturing a semiconductor device with a copper wiring layer100US 5,084,412 AKabushiki Kaisha Toshiba · 1992
- Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure80US 5,324,684 AProcessing Technologies, LLC · 1994