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US 5,084,412 AGranted
Method of manufacturing a semiconductor device with a copper wiring layer
AssigneeKabushiki Kaisha Toshiba
InventorYasushi Nakasaki
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Abstract
According to this invention, there is provided to a semiconductor device comprising a semiconductor substrate on which an element is formed, an insulating interlayer formed on the semiconductor substrate, and a wiring layer having a structure in which a surface of a copper layer in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer.
Claims7
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an element on a semiconductor substrate;
- depositing an insulating interlayer on said semiconductor substrate;
- sequentially depositing a thin layer made of a metal not forming an intermetallic compound with copper and a copper layer on said insulating interlayer to form a stacked layer;
- patterning said stacked layer;
- and
- forming a wiring layer having a structure in which said patterned stacked layer is heat-treated in a nitrogen containing atmosphere to diffuse a metal of said metal thin layer to a peripheral surface of a copper layer through said copper layer, said diffused metal is nitrided to cover a surface of the copper layer in a crystal state with a nitride of a metal not forming an intermetallic compound with copper, and said metal and/or said metal nitride is present at grain boundaries of the copper layer.
3 more elements
Dependencies are inferred from the claim text.