US 5,763,953 A · Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.

Claims5

Dependent claims

A semiconductor device comprising:

a first metal film formed on a semiconductor substrate;
a second metal film formed on said first metal film and consisting essentially of silver or containing silver as a main component;
and
a film containing a metal element of said first metal film and covering at least an upper surface of said second metal film;
wherein said film containing the metal element of said first metal film consists essentially of one selected from the group consisting of an oxide and a nitride of the metal element.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/588,511Filed 18 Jan 1996 · division

Priority

JP 5-0159145 Jan 1993

Granted

9 Jun 1998

Term ends

Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10D 64/0111
Of electrodes ohmically coupled to a semiconductor: to Group IV semiconductors
H10W 20/032
Of conductive parts of the interconnections: of conductive barrier, adhesion or liner layers
H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims5