Y10S 148/154
Solid phase epitaxy
Y10S148/154 (Solid phase epitaxy) appears on 39 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 39
- Published applications
- 0
- Assignees
- 24
- Inventors
- 75
- Latest grant
- 20 Nov 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 7 | 0 |
| 1991 | 8 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of fabricating a thin film transistor20 Nov 2001US 6,319,761 B1Semiconductor Energy Laboratory Co.Ltd.
- Raised source/drain with silicided contacts for semiconductor devices2 Jun 1998US 5,760,451 AInternational Business Machines Corporation
- Process for isolating a semiconductor layer on an insulator11 Nov 1997US 5,686,343 AGoldstar Electron Co., Ltd.
- Method of forming a semiconductor material having a substantially I-type crystalline layer3 Dec 1996US 5,580,820 ASemiconductor Energy Laboratory Co.Ltd.
- Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer30 Jan 1996US 5,488,000 ASemiconductor Energy Laboratory Co.Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer317US 5,488,000 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method for forming semiconductor thin film163US 5,278,093 ACanon Kabushiki Kaisha · 1994
- PROM electrically written by solid phase epitaxy107US 4,174,521 AHarris Corporation · 1979
- Method of producing SOI structures71US 5,061,655 AMitsubishi Denki Kabushiki Kaisha · 1991
- Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers44US 4,876,219 AFujitsu Limited · 1989