Raised source/drain with silicided contacts for semiconductor devices
AssigneeInternational Business Machines Corporation
InventorAnthony J. Yu
Life of this patent
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Abstract
A contact for a semiconductor device is provided by depositing a layer of palladium on a silicon substrate, causing the palladium to react with the substrate for forming palladium silicide, removing unreacted palladium from the substrate, forming doped silicon on the palladium silicide and substrate, causing the silicon to be transported through the palladium silicide for recrystallizing on the substrate for forming epitaxially recrystallized silicon regions on the substrate and lifting the palladium silicide above the epitaxially recrystallized silicon regions for forming a silicided contact therefor, and removing the doped silicon from the substrate.
Claims13
A semiconductor device, comprising:
- a silicon substrate;
- a gate formed on said substrate, said gate having first and second sidewalls;
- first and second sidewall spacers formed on said first and second sidewalls of said gate wherein said first and second sidewall spacers comprise silicon nitride;
- first and second palladium silicide contacts, said first and second sidewall spacers insulating said gate from said first and second palladium silicide contacts;
- a single raised source structure partially above and partially below said substrate, under said first palladium contact, said first sidewall spacer insulating said gate from said source structure;
- and
- a single raised drain structure partially above and partially below said substrate, under said second palladium contact, said second sidewall spacer insulating said gate from said drain structure.
Dependencies are inferred from the claim text.