Process for isolating a semiconductor layer on an insulator
AssigneeGoldstar Electron Co., Ltd.
InventorChang-Jae Lee
Life of this patent
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Abstract
A process for the isolation of a semiconductor layer on an insulator. A process for isolating a semiconductor layer on an insulator is disclosed that includes the steps of: forming a first insulating layer on a semiconductor substrate, and opening a window by etching the first insulating layer which becomes an epitaxial growth seed; depositing a semiconductor layer and growing an epitaxial layer which has the same crystal structure as the semiconductor substrate under the window; forming an active area of the epitaxial layer by a photolithographic process; forming a second insulating layer on and at the side of the active area and on the first insulating layer; and isolating an active area from the semiconductor layer by forming a third insulator layer in the window by an oxidation process.
Claims20
A process for isolating a semiconductor layer on an insulator, comprising the steps of:
- depositing an oxide layer as a first insulator layer on a semiconductor substrate, and selectively etching the first insulator layer to open a window to the substrate;
- forming a semiconductor layer in the window and on the first insulating layer and converting the crystal structure of the semiconductor layer, wherein the crystal structure of the semiconductor layer is based on the crystal structure of the semiconductor substrate;
- patterning the semiconductor layer by a photolithographic process to form an active area having a top and sides;
- and
- forming a second insulator layer on the top and along the sides of the active area and on the first insulator layer, and isolating the active area from the substrate by forming a third insulator layer in the window by an oxidation process.
A process for isolating a semiconductor layer on an insulator, comprising the steps of:
- depositing an oxide layer as a first insulator layer on a semiconductor substrate, and opening a window to the semiconductor substrate by selectively etching the first insulator layer;
- depositing a semiconductor layer in the window to the semiconductor substrate and on the first insulator layer, and growing a single crystalline epitaxial semiconductor layer from the substrate through the window;
- forming a second insulator layer on the epitaxial semiconductor layer, and patterning the second insulator layer and the epitaxial semiconductor layer to form an active area having a top surface and sides with the second insulator area remaining on the top surface thereof;
- forming a third insulator layer along the sides of the active area and on the remaining second insulating layer, and forming a fourth insulator layer by oxidizing a portion of the epitaxial semiconductor layer and the semiconductor substrate in the window by diffusion of oxidant from the first insulator layer, wherein the active area is isolated from the semiconductor substrate.
A process for forming an active semiconductor area surrounded by an insulator, comprising the steps of:
- depositing an oxide layer as a first insulator layer on the surface of a semiconductor substrate;
- forming a window in the first insulator layer to the surface of the semiconductor substrate;
- forming a polysilicon or amorphous silicon layer over the surface of the first insulator layer and filling the window to the substrate;
- forming an active semiconductor layer by converting the crystal structure of the polysilicon or amorphous silicon layer based on the crystal structure of the semiconductor substrate;
- patterning the active semiconductor layer to form an active semiconductor area having a top and sides;
- forming a second insulator layer on the top and along the sides of the active semiconductor area, the second insulator layer being resistant to oxidation;
- forming a third insulator layer on the surface of the semiconductor substrate within the window by an oxidation process, wherein portions of the active semiconductor area and the semiconductor substrate are oxidized, wherein the active semiconductor area is isolated from the semiconductor substrate.
Dependencies are inferred from the claim text.