Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Satoshi Teramoto
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Abstract
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.
Claims16
A method of fabricating a semiconductor device comprising the steps of:
- forming a non-single crystal semiconductor film on a substrate;
- forming an insulating film on the semiconductor film;
- patterning the semiconductor film and the insulating
- forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film;
- and
- starting the crystallization from the side of the patterned semiconductor film.
A method of fabricating a semiconductor device comprising the steps of:
- forming a non-single crystal semiconductor film on a substrate;
- forming an insulating film on the semiconductor film;
- patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film;
- and heating the patterned semiconductor film after the forming step of the film containing the metal element.
A method of fabricating a transistor comprising the steps of:
- semiconductor film on a
- forming a non-single crystal substrate;
- forming an insulating film on the semiconductor film;
- patterning the semiconductor film and the insulating film;
- forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film;
- starting the crystallization from the side of the patterned semiconductor film;
- removing a part of the patterned semiconductor film which is in contact with said film containing said metal element after the crystallization;
- removing another part of the patterned semiconductor film which contains a front end of crystal growth of the crystallization;
- and
- forming a transistor comprising a semiconductor region provided in the other part of the patterned semiconductor film.
A method of fabricating a semiconductor device comprising the steps of:
- forming a non-single crystal semiconductor film on a substrate;
- forming an insulating film on the semiconductor film;
- patterning the semiconductor film and the insulating film;
- forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film;
- and
- starting the crystallization from the side of the patterned semiconductor film in a direction parallel to the substrate.
A method of fabricating a semiconductor device comprising the steps of:
- forming a non-single crystal semiconductor film on a substrate;
- forming an insulating film on the semiconductor film;
- patterning the semiconductor film and the insulating film;
- forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film;
- and
- heating the patterned semiconductor film after the forming step of the film containing the metal element to cause crystal growth of the patterned semiconductor film in a direction parallel to the substrate.
Dependencies are inferred from the claim text.