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US 5,278,093 AGranted
Method for forming semiconductor thin film
AssigneeCanon Kabushiki Kaisha
InventorTakao Yonehara
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700.degree. C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200.degree. C. or higher in which a lamp light is radiated to the crystallized thin film.
Claims25
A method for forming a semiconductor thin film which comprises:
- (i) crystallizing an amorphous thin film formed on an amorphous insulating surface of a substrate by a first thermal treatment at 700.degree. C. or lower for at least ten hours to form a crystallized thin film having a grain size of at least 1 .mu.m;
- (ii) providing a capping material on said crystallized thin film;
- and
- (iii) rapidly heating said crystallized thin film to a temperature of 1200.degree. C. or higher by irradiating said crystallized thin film with a lamp light and conducting a second thermal treatment at 1200.degree. C. or higher by keeping said crystallized thin film at a temperature of 1200.degree. C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
1 more element
A method for forming a semiconductor thin film which comprises:
- (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700.degree. C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film;
- (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 .mu.m;
- (iii) providing a capping material on said crystallized thin film;
- and
- (iv) rapidly heating said crystallized thin film to a temperature of 1200.degree. C. or higher and subjecting said crystallized thin film to a second thermal treatment at 1200.degree. C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
2 more elements
A method for forming a semiconductor thin film which comprises
- (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700.degree. C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film;
- (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 .mu.m;
- (iii) rapidly heating said crystallized thin film to a temperature of 1200.degree. C. or higher and subjecting said crystallized thin film to a second thermal treatment by keeping said crystallized thin film at 1200.degree. C. or higher for 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Dependencies are inferred from the claim text.