Method of producing SOI structures

A method of processing a SOI structure, including an insulating layer formed on a monocrystal semiconductor layer, to produce a silicon on insulator semiconductor device, comprising the steps of:

• forming openings in said insulating layer at regular intervals, said openings extending from a top surface of said insulating layer through said insulating layer to the underlying monocrystal semiconductor layer;
• forming a non-monocrystal semiconductor layer on said insulating layer and in said openings;
• smoothing a surface of said non-monocrystal semiconductor layer;
• forming a light reflection-preventive film of successively alternating first and second thickness regions along the smoothed surface of the non-monocrystal semiconductor layer, said first thickness regions having a higher light reflection capability than said second thickness regions and positioned above said openings;
• irradiating the surface of said reflection-preventive film to melt said non-monocrystal semiconductor layer;
• and
• cooling the melted layer;
• whereby a second monocrystal semiconductor layer is formed.

A method of producing a SOI structure with a first monocrystal semiconductor layer formed with a second monocrystal semiconductor layer with an insulating layer interposed therebetween, comprising the steps of:

• forming an insulating layer formed on a surface of said first monocrystal semiconductor layer,
• forming a non-monocrystal semiconductor layer on a surface of said insulating layer,
• smoothing the surface of said non-monocrystal semiconductor layer,
• forming a reflection-preventive film on the smoothed surface of said non-monocrystal semiconductor layer, said reflection-preventive film having alternating first and second film thickness regions having first and second reflectances for light,
• melting said non-monocrystal semiconductor layer by irradiating the surface of said reflection-preventive film with light and then cooling it for monocrystallization to form a second monocrystal semiconductor layer.