Method of forming a semiconductor material having a substantially I-type crystalline layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A method for forming a semiconductor material involves forming an i-type non-single crystalline layer on a substrate and crystallizing the semiconductor material by irradiation with a light having a wavelength in the range of 250 to 600 nm. Desirably, the crystals of the semiconductor material extend in column form approximately perpendicular to the substrate. Preferably, the i-type layer is doped with a recombination center neutralizer selected from hydrogen and a halogen element and the concentration of impurities forming recombination centers, such as oxygen, nitrogen, carbon, phosphorus, and boron, are maintained at 1 atomic % or less.
Claims27
A method of forming a semiconductor material comprising the steps of:
- forming a substantially i-type non-single crystalline semiconductor material;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less,
- where a total concentration of an impurity which forms a recombination center in said semiconductor material is 1 atomic % or less.
A method for forming a semiconductor material comprising the steps of:
- forming a substantially i-type non-single crystalline semiconductor material on a substrate;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less,
- where crystals of said semiconductor material extend in a column form approximately perpendicular to said substrate.
A method of forming a semiconductor material comprising the steps of:
- preparing a transparent substrate;
- forming a substantially i-type non-single crystalline semiconductor material on said substrate;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less,
- wherein said light is irradiated from a side of said substrate opposite to said semiconductor material.
A method for forming a semiconductor material comprising the steps of:
- depositing a substantially i-type non-single crystalline semiconductor material by CVD;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less.
A method for forming a semiconductor material comprising the steps of:
- depositing a substantially i-type non-single crystalline semiconductor material;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less,
- wherein said semiconductor material contains an impurity which forms a recombination center in an amount of 1 atom % or less, said impurity selected from the group consisting of oxygen, nitrogen, carbon, phosphorus, and boron.
A method for forming a semiconductor material comprising the steps of:
- depositing a substantially i-type non-single crystalline semiconductor material;
- and
- crystallizing said semiconductor material by irradiating said semiconductor material with a light having a wavelength of 600 nm or less,
- wherein said semiconductor material comprises silicon having an optical band gap in the range of 1.4 to 1.6 eV after said crystallizing.
Dependencies are inferred from the claim text.