Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers
AssigneeFujitsu Limited
InventorsTakashi Eshita, Fumitake Mieno, Yuji Furumura, Takuya Watanabe
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Abstract
A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.
Claims8
A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor on said silicon substrate, and growing a first epitaxial layer of the compound semiconductor on said amorphous layer, characterized in that said method further comprises the steps of:
- after said epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on said first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on said second amorphous layer.
Dependencies are inferred from the claim text.