Y10S 148/165
Transmutation doping
Y10S148/165 (Transmutation doping) appears on 17 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 17
- Published applications
- 0
- Assignees
- 11
- Inventors
- 37
- Latest grant
- 9 Nov 1993
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Transparent semiconductor crystals9 Nov 1993US 5,259,917 AThe United States of America as represented by the Secretary of the Air Force
- P-well CMOS process using neutron activated doped N-/N+ silicon substrates18 May 1993US 5,212,100 ATexas Instruments Incorporated
- Neutron transmutation doping of a silicon wafer20 Mar 1990US 4,910,156 AToshiba Ceramics Co., Ltd.
- Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation1 Mar 1988US 4,728,371 ASiemens Aktiengesellschaft
- Method of making thyristor with a high tolerable bias voltage27 Jan 1987US 4,639,276 AMitsubishi Denki Kabushiki Kaisha
No published applications in this class yet.
Most cited
By later US patents
- Semiconductor timing device with radioactive material at the floating gate electrode of an insulated-gate field-effect transistor27US 4,275,405 AMullard Limited · 1981
- Polycrystalline silicon semiconducting material by nuclear transmutation doping18US 4,129,463 AThe United States of America as represented by the United States Department of Energy · 1978
- Method of doping a semiconductor layer15US 3,967,982 ASiemens Aktiengesellschaft · 1976
- Process for gettering semiconductor components and integrated semiconductor circuits15US 4,319,119 ASiemens Aktiengesellschaft · 1982
- Neutron transmutation doping of a silicon wafer15US 4,910,156 AToshiba Ceramics Co., Ltd. · 1990