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US 3,967,982 AGranted
Method of doping a semiconductor layer
AssigneeSiemens Aktiengesellschaft
InventorsHeinz-Herbert Arndt, Joachim Burtscher, Gustav Fischer, Ernst Haas, Joachim Martin, Gunter Raab, Manfred Schnoeller
Life of this patent
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Abstract
A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.
Claims16
A method of doping a semiconductor layer arranged on a substrate with a dopant substance comprising:
- subjecting said semiconductor layer to controlled bombardment by neutrons so that atoms of said semiconductor layer are converted by a nuclear reaction into dopant substance atoms.
Dependencies are inferred from the claim text.