Polycrystalline silicon semiconducting material by nuclear transmutation doping
AssigneeThe United States of America as represented by the United States Department of Energy
InventorsJohn W. Cleland, Russell D. Westbrook, Richard F. Wood, Rosa T. Young
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Abstract
A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.
Claims8
A semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns containing phosphorus atoms dispersed throughout said polycrystalline silicon rather than at the grain boundaries said semiconductor material prepared by exposing polycrystalline silicon containing .sup.30 Si to a neutron flux to cause the transmutation of .sup.30 Si to .sup.31 P, thereby providing polycrystalline silicon containing dispersed phosphorus atoms, and then annealing said polycrystalline silicon containing phosphorus to remove radiation damage.
Dependencies are inferred from the claim text.