Process for gettering semiconductor components and integrated semiconductor circuits

In a process for gettering semiconductor components and integrated semiconductor circuits whose structures are produced in monocrystalline semiconductor material wafers wherein gettering areas are provided on a back side of such wafer, the improvement comprising:

• controllably irradiating select areas of a back side of a monocrystalline semiconductor material wafer with laser light pulses so as to produce dislocation networks in the irradiated areas, said laser irradiation being controlled in such a manner that at least two laser pulses are irradiated onto said select areas of the wafer, a first laser pulse being of sufficient energy to evaporate a relatively thin layer of material from the irradiated areas and a second laser pulse being of sufficient energy to produce dislocation networks in the irradiated areas, said first laser pulse having an energy level which is higher by a factor of 2 than that of said second layer pulse.