Y10S 148/088
J-fet, i.e. junction field effect transistor
Official title: J-Fet, i.e. junction field effect transistor
Y10S148/088 (J-fet, i.e. junction field effect transistor) appears on 53 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 53
- Published applications
- 0
- Assignees
- 37
- Inventors
- 78
- Latest grant
- 23 Sep 1997
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 2 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 3 | 0 |
| 1982 | 5 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of making combined metal oxide semiconductor and junction field effect transistor device23 Sep 1997US 5,670,393 ALSI Logic Corporation
- Method of making JFET structures for semiconductor devices with complementary bipolar transistors29 Jul 1997US 5,652,153 AHarris Corporation
- High-density read-only memory fabrication23 May 1995US 5,418,178 AAT&T Corp.
- Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers23 Mar 1993US 5,196,358 AThe United States of America as represented by the Secretary of the Navy
- Dual layer surface gate JFET having enhanced gate-channel breakdown voltage2 Jun 1992US 5,118,632 AHarris Corporation
No published applications in this class yet.
Most cited
By later US patents
- Semiconductor devices controlled by depletion regions88US 4,698,653 A1987
- Method of making a gallium arsenide field effect transistor80US 4,545,109 ARCA Corporation · 1985
- Vertical transistor device fabricated with semiconductor regrowth80US 5,106,778 AMassachusetts Institute of Technology · 1992
- Vertical multijunction solar cell59US 3,969,746 ATexas Instruments Incorporated · 1976
- High voltage Schottky barrier diode43US 4,134,123 AU. S. Philips Corporation · 1979