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US 4,545,109 AGranted
Method of making a gallium arsenide field effect transistor
AssigneeRCA Corporation
InventorWalter F. Reichert
Life of this patent
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Abstract
A method of producing a high frequency III-V FET and the resultant structure is described wherein a doped layer is formed on a wafer of undoped, semi-insulating III-V material. The structure is then etched to form a mesa after which, a channel region is regrown from an exposed portion of the III-V substrate. The formation of the channel region defines the source and drain regions. Ohmic contacts are then made to the source and drain regions after which a Schottky contact is made to the channel region.
Claims8
A method of producing a semiconductor device, comprising the steps of:
- forming a doped layer of a III-V compound material on the surface of a substrate of semi-insulating III-V compound material, the layer doped to a first concentration of a given conductivity type;
- forming a mesa by etching through portions of the doped layer and partially through the thickness of the substrate;
- forming a first aperture in the doped layer to expose a portion of the substrate;
- growing a channel region of the III-V compound material in the aperture to a sufficient thickness to extend laterally, partially over and insulated from the surface of the doped layer, the channel region doped to a second, lower concentration of the given conductivity type;
- forming a Schottky contact to the channel region;
- and
- forming ohmic contacts on the surface of the doped layer which are positioned such that the ohmic contacts are spaced apart from the channel region.
4 more elements
Dependencies are inferred from the claim text.