Y10S 148/109
Memory devices
Y10S148/109 (Memory devices) appears on 25 US grants and 6 published applications in this corpus.
Search patents in Y10S- Granted patents
- 25
- Published applications
- 6
- Assignees
- 15
- Inventors
- 30
- Latest grant
- 11 Apr 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 2 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 2 | 0 |
| 2024 | 0 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields11 Apr 2023US 11,626,229 B2University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields28 Feb 2023US 11,594,357 B2University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields11 May 2021US 11,004,588 B2University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields17 Dec 2019US 10,510,474 B2University of Rochester
- Method for making an isolated vertical transistor30 Dec 1997US 5,702,959 ATexas Instruments Incorporated
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields12 Dec 2024US 2024/0412909 A1University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields8 Feb 2024US 2024/0047115 A1University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields14 Oct 2021US 2021/0319939 A1University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields10 Sep 2020US 2020/0286659 A1University of Rochester
- Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields16 Apr 2020US 2020/0118725 A1University of Rochester
Most cited
By later US patents
- Floating-gate memory cell with tailored doping profile144US 5,156,990 ATexas Instruments Incorporated · 1992
- High performance thin film transistor (TFT) by solid phase epitaxial regrowth104US 5,156,987 AMicron Technology, Inc. · 1992
- Floating gate memory with sidewall tunnelling area69US 4,931,847 ASGS-Thomson Microelectronics S.A. · 1990
- Method for forming a thin film transistor50US 5,510,278 AMotorola, Inc. · 1996
- Erase performance improvement via dual floating gate processing34US 5,147,813 AIntel Corporation · 1992