Y10S 148/013
Breakdown voltage
Y10S148/013 (Breakdown voltage) appears on 15 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 15
- Published applications
- 0
- Assignees
- 11
- Inventors
- 18
- Latest grant
- 28 Dec 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device with increased maximum terminal voltage28 Dec 1999US 6,008,512 AIntersil Corporation
- Method of increasing maximum terminal voltage of a semiconductor device9 Sep 1997US 5,665,634 AHarris Corporation
- Method for controlling electrical breakdown in semiconductor power devices18 Jul 1995US 5,434,095 ASundstrand Corporation
- Semiconductor process for manufacturing semiconductor device with increased operating voltages18 Apr 1995US 5,408,125 ATexas Instruments Incorporated
- Fabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applications21 Mar 1995US 5,399,507 AMotorola, Inc.
No published applications in this class yet.
Most cited
By later US patents
- Method of making a ferroelectric capacitor and forming local interconnect62US 5,273,927 AMicron Technology, Inc. · 1993
- Fabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applications60US 5,399,507 AMotorola, Inc. · 1995
- Method of manufacturing a planar semiconductor device having a guard ring structure33US 5,028,548 AU. S. Philips Corporation · 1991
- Silicon oxynitride storage node dielectric25US 4,725,560 AInternational Business Machines Corporation · 1988
- Semiconductor process for manufacturing semiconductor devices with increased operating voltages25US 5,330,922 ATexas Instruments Incorporated · 1994