Silicon oxynitride storage node dielectric
AssigneeInternational Business Machines Corporation
InventorsJohn R. Abernathey, David L. Johnson, Pai-Hung Pan, Charles A. Paquette
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Abstract
An annealing process carried out at 800.degree. C. in a wet O.sub.2 ambient permits the manufacture of a reliable storage capacitor wherein the dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes first depositing the silicon oxynitride film by LPCVD, second annealing in wet O.sub.2 at 800.degree. C. or N.sub.2 at 1000.degree. C., third forming an N-type region in the silicon substrate by As.sup.+ ion implantation through the silicon oxynitride film, fourth annealing in wet O.sub.2 at 800.degree. C., and fifth depositing an electrode.
Claims10
A method of forming a thin film of silicon oxynitride exhibiting a high breakdown voltage on a silicon substrate of a first conductivity type, comprising the steps of:
- forming a thin film of silicon oxynitride on the silicon substrate;
- then forming a region of a second conductivity type in at least part of the silicon substrate by ion implantation through said thin film of silicon oxynitride;
- and
- then annealing said silicon oxynitride film in a wet O.sub.2 ambient at a temperature above 700.degree. C. and below 1000.degree. C.
A method of forming a capacitor structure on the surface of a semiconductor substrate of a first conductivity type, comprising the steps of:
- depositing a thin layer of silicon oxynitride on the substrate by use of a low pressure chemical vapor deposition process;
- then carrying out a first anneal on said layer of silicon oxynitride;
- then implanting dopant ions of a second conductivity type through said layer of silicon oxynitride to form an implanted region the substrate;
- then carrying out a second anneal on said layer of silicon oxynitride, said second anneal being carried out in a wet O.sub.2 ambient at a temperature above 700.degree. C. and below 1000.degree. C.;
- and
- then forming an electrode on said layer of silicon oxynitride.
A method of forming a high capacitance storage capacitor for a dynamic random access memory cell formed on a semiconductor substrate of a first conductivity type, comprising the steps of:
- forming a thin layer of silicon oxynitride on the substrate by the use of a low pressure chemical vapor deposition technique;
- then carrying out a first anneal cycle in an N.sub.2 ambient at a temperature of approximately 1000.degree. C.;
- then implanting ions of a second conductivity type through said thin silicon oxynitride layer into a surface portion of the substrate;
- then carrying out a second anneal cycle in a wet O.sub.2 ambient at a temperature of approximately 800.degree. C.;
- and
- then forming an electrode on said thin layer of silicon oxynitride.
Dependencies are inferred from the claim text.