Y10S 148/027
Dichlorosilane
Y10S148/027 (Dichlorosilane) appears on 11 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 11
- Published applications
- 0
- Assignees
- 8
- Inventors
- 22
- Latest grant
- 1 Jul 1997
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Uniform tungsten silicide films produced by chemical vapor depostiton1 Jul 1997US 5,643,633 AAPPLIED Materials.Inc.
- Uniform tungsten silicide films produced by chemical vapor deposition24 Sep 1996US 5,558,910 AAPPLIED Materials.Inc.
- Uniform tungsten silicide films produced by chemical vapor deposition19 Mar 1996US 5,500,249 AAPPLIED Materials.Inc.
- Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture27 Jul 1993US 5,231,056 AMicron Technology, Inc.
- Substantially facet-free selective epitaxial growth process1 Dec 1992US 5,168,089 AAT&T Bell Laboratories
No published applications in this class yet.
Most cited
By later US patents
- Uniform tungsten silicide films produced by chemical vapor deposition251US 5,500,249 AAPPLIED Materials.Inc. · 1996
- Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture113US 5,231,056 AMicron Technology, Inc. · 1993
- Oxide deposition method103US 4,810,673 ATexas Instruments Incorporated · 1989
- Method for fabricating self-aligned semiconductor devices82US 5,061,644 AHoneywell Inc. · 1991
- Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition52US 4,462,847 ATexas Instruments Incorporated · 1984