Uniform tungsten silicide films produced by chemical vapor depostiton
AssigneeApplied Materials, Inc.
InventorsSusan G. Telford, Meng Chu Tseng, Michio Aruga, Moshe Eizenberg
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Abstract
A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
Claims15
A chemical vapor deposition process for depositing a substantially uniform, substantially fluorine-free layer of WSi.sub.x directly on a substrate, the process comprising the steps of:
- (a) placing a substrate in a deposition zone;
- (b) introducing a process gas comprising dichlorosilane and WF.sub.6 into the zone;
- (c) maintaining the pressure in the zone at at least 1 Torr;
- and
- (d) heating the substrate to a temperature of at least 550.degree. C., to deposit a WSi.sub.x layer having a substantially uniform W to Si ratio directly on the substrate.
Dependencies are inferred from the claim text.