Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
Life of this patent
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Abstract
A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.
Claims15
A process for depositing a tungsten silicide film on a substrate comprising:
- depositing a nucleation layer of tungsten silicide (WSi.sub.x) on the substrate using a (CVD) process with a silane (SiH.sub.4) silicon source gas and a reactant gas;
- and depositing a film of tungsten silicide (WSi.sub.x) on the nucleation layer using a (CVD) process by switching to dichlorosilane (SiH.sub.2 Cl.sub.2) as a silicon source gas such that the dichlorosilane gas reacts with the reactant gas to form the tungsten silicide film.
A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate comprising:
- depositing a thin or discontinuous nucleation layer of tungsten silicide (WSi.sub.x) on the substrate using a (CVD) process and reacting a silane (SiH.sub.4) silicon source gas with a reactant gas in a CVD system having a premix chamber for combining the silicon source gas and the reactant gas;
- and
- depositing a film of tungsten silicide (WSi.sub.x) on the nucleation layer using a (CVD) process by switching to dichlorosilane (SiH.sub.2 Cl.sub.2) as a silicon source gas such that the dichlorosilane gas reacts with the reactant gas to form the tungsten silicide film.
Dependencies are inferred from the claim text.