Y10S 148/048
Energy beam assisted epi growth
Official title: Energy beam assisted EPI growth
Y10S148/048 (Energy beam assisted epi growth) appears on 42 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 42
- Published applications
- 0
- Assignees
- 31
- Inventors
- 106
- Latest grant
- 27 Aug 1996
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 12 | 0 |
| 1990 | 7 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of producing sheets of crystalline material and devices made therefrom27 Aug 1996US 5,549,747 AMassachusetts Institute of Technology
- Method of producing polycrystalline semiconductor thin film25 Apr 1995US 5,409,867 AFuji Electric Co., Ltd.
- Method of providing lower contact resistance in MOS transistor structures22 Mar 1994US 5,296,386 ANational Semiconductor Corporation
- Method for forming semiconductor thin films where an argon laser is used to suppress crystal growth28 Dec 1993US 5,273,932 ANippon Telegraph and Telephone Corporation
- Atomic layer epitaxy of compound semiconductor14 Dec 1993US 5,270,247 AFujitsu Limited
No published applications in this class yet.
Most cited
By later US patents
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Atomic layer epitaxy of compound semiconductor166US 5,270,247 AFujitsu Limited · 1993
- Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation105US 4,940,505 AEaton Corporation · 1990
- Method of producing tandem solar cell devices from sheets of crystalline material96US 4,816,420 AMassachusetts Institute of Technology · 1989
- Method of producing polycrystalline semiconductor thin film81US 5,409,867 AFuji Electric Co., Ltd. · 1995