Atomic layer epitaxy of compound semiconductor
AssigneeFujitsu Limited
InventorsYoshiki Sakuma, Masashi Ozeki, Nobuyuki Ohtuka, Kunihiko Kodama
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Abstract
A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.
Claims12
A process for growing a crystalline compound semiconductor, comprising the steps of:
- heating a crystalline substrate to a predetermined temperature in a vacuum chamber, and
- at said predetermined temperature of the crystalline substrate and in the following sequence:
- supplying a first source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure,
- discharging the first source gas,
- supplying a second source gas for a first V-group element over said crystalline substrate under a predetermined pressure,
- discharging the second source gas,
- supplying a third source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure,
- discharging the third source gas,
- supplying a fourth source for a second V-group element over said crystalline substrate under a predetermined pressure, and
- discharging the forth source gas,
- wherein said first and second V-group elements have at least different compositions or different constituent elements.
A process for growing a crystalline compound semiconductor, comprising the steps of:
- supplying a III-group element source gas over a crystalline substrate,
- supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas for a time,
- supplying a V-group element source gas over the crystalline substrate, and
- supplying a hydrogen gas over the crystalline substrate to purge away the V-group element source gas for a time, and
- repeating said steps to grow a III-V compound semiconductor layer on the crystalline substrate,
- wherein said time of supplying the hydrogen gas for said purge is controlled to thereby control a growth rate of said compound semiconductor.
A process for growing a crystalline compound semiconductor, comprising the steps of:
- supplying a III-group element source gas over a crystalline substrate,
- supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas,
- supplying a V-group element source gas over the crystalline substrate,
- supplying a hydrogen gas over the crystalline substrate to purge away the V-group source gas, and
- supplying a dopant source over the crystalline substrate, and
- repeating the above steps to grow a doped III-V compound semiconductor layer on the crystalline substrate for a time,
- wherein said time of supplying the hydrogen gas is controlled to thus control a concentration of said dopant in said doped-III-V compound semiconductor layer.
Dependencies are inferred from the claim text.