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US 5,409,867 AGranted
Method of producing polycrystalline semiconductor thin film
AssigneeFuji Electric Co., Ltd.
InventorAkihiko Asano
Life of this patent
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Abstract
After partially crystallizing an amorphous semiconductor deposited on a substrate, the irradition of infrared ray is conducted to grow a polycrystalline semiconductor layer on the crystallized region and the amorphous region by thermal decomposition while the temperature of the crystallized region is kept higher than that of the amorphous region. Since the polycystalline layer is formed of polycystalline grains grown from nuclei of the cystallized region, the crystal grain thereof is large.
Claims8
A method of producing a polycrystalline semiconductor thin film, comprising the steps of:
- depositing an amorphous semiconductor thin film on a substrate;
- partially crystallizing said amorphous semiconductor thin film by irradiation of light to a plurality of regions of said amorphous semiconductor thin film separated from each other with a substantially same distance;
- and
- growing a polycrystalline layer by thermal decomposition of a compound gas on an entire surface of crystallized regions and amorphous regions while a temperature of the respective crystallized regions is kept higher than that of the respective amorphous regions.
1 more element
Dependencies are inferred from the claim text.