Y10S 148/029
Differential crystal growth rates
Y10S148/029 (Differential crystal growth rates) appears on 13 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 13
- Published applications
- 0
- Assignees
- 13
- Inventors
- 32
- Latest grant
- 19 Nov 1991
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 7 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Process of producing monolithically integrated multifunction circuit arrangements19 Nov 1991US 5,066,605 ALicentia Patent-Verwaltungs-G.m.b.H.
- Method for fabricating self-aligned semiconductor devices29 Oct 1991US 5,061,644 AHoneywell Inc.
- Process of fabricating a heterojunction field effect transistor25 Jun 1991US 5,026,655 ANEC Corporation
- Process for photo-assisted epitaxial growth using remote plasma with in-situ etching17 Apr 1990US 4,918,028 ACanon Kabushiki Kaisha
- Heterojunction field effect transistor device and process of fabrication thereof9 Jan 1990US 4,893,155 AGeneral Electric Company
No published applications in this class yet.
Most cited
By later US patents
- Selective OMCVD growth of compound semiconductor materials on silicon substrates107US 4,826,784 AKopin Corporation · 1989
- Method for fabricating self-aligned semiconductor devices82US 5,061,644 AHoneywell Inc. · 1991
- Method of making defect free silicon islands using SEG70US 4,758,531 AInternational Business Machines Corporation · 1988
- Method for obtaining regions of dielectrically isolated single crystal silicon35US 4,824,795 ASiliconix Incorporated · 1989
- Method of fabricating compound semiconductor laser using selective irradiation23US 4,843,031 AMatsushita Electric Industrial Co., Ltd. · 1989