Process of producing monolithically integrated multifunction circuit arrangements

A process for producing monolithically integrated multifunction circuit arrangements composed of at least one integrated circuit integrated in a monocrystalline semiconductor substrate and at least one multilayer semiconductor component disposed on the substrate, said method including the steps of:

• providing a monocrystalline semiconductor substrate having an integrated circuit formed therein adjacent one major surface and a passivating layer covering said one surface;
• forming at least one window for a contact zone and at least one further window for a multilayered semiconductor component in said passivating layer above selected laterally separated respective connection regions of said integrated circuit extending to said one surface of said substrate,
• epitaxially growing a structured semiconductor layer sequence on at least the portions of said one surface of said substrate within said windows to provide a monocrystalline multilayer component in one of said windows and a monocrystalline vertical contact zone in one of said further windows;
• and,
• forming a conductive connection layer on top of said vertical contact zone and said multilayered component, whereby a planar, three-dimensional integrated circuit arrangement is formed.