Method of fabricating compound semiconductor laser using selective irradiation
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYuzaburo Ban, Hiraaki Tsujii, Youichi Sasai, Mototsugu Ogura, Hiroyuki Serizawa
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Abstract
Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.
Claims11
A method of fabricating a compound semiconductor device comprising:
- a step of epitaxially growing a first clad layer on a semiconductor substrate, an active layer on said first clad layer, a second clad layer on said active layer and a contact layer on said second clad layer while partially illuminating said semiconductor substrate with light;
- a step of electrically insulating between the illuminated part and non-illuminated part of said first clad layer, active layer, second clad layer and contact layer;
- and
- a step of forming first and second electrode layers in the illuminated part and non-illuminated part of said contact layer, and a third electrode layer on the side of said semiconductor substrate where said first clad layer is not formed.
A method of fabricating a semiconductor laser comprising:
- a step of forming a first clad layer on a semiconductor substrate;
- a step of epitaxially growing an active layer on said first clad layer while illuminating part of the first clad layer with light;
- a step of epitaxially growing a second clad layer on said active layer;
- and
- a step of forming a first electrode on said second clad layer and a second electrode on the side of the semiconductor substrate where said first clad layer is not formed.
A method of fabricating a semiconductor laser comprising:
- a step of sequentially growing epitaxially a first clad layer on a semiconductor substrate, an active layer on said first clad layer, and a second clad layer on said active layer;
- a step of growing epitaxially a semiconductor layer while illuminating a desired part with light while supplying n-type and p-type dopant sources simultaneosuly on said second clad layer;
- and
- a step of forming a first electrode layer on said semiconductor layer, and a second electrode layer on the side of said semiconductor substrate where said first clad layer is not formed.
A method of fabricating a semiconductor laser comprising:
- a step of growing epitaxially a first clad layer, an active layer, a second clad layer and a cap layer sequentially on a semi-insulating semiconductor substrate, while simultaneously supplying n-type and p-type dopant sources and illuminating part of said semiconductor substrate with light;
- and
- a step of forming a first electrode layer and a second electrode layer on the illuminated part and non-illuminated part on said cap layer.
A method of fabricating a semiconductor grating by epitaxially growing a semiconductor layer on a substrate while illuminating the substrate surface with interference laser light.
Dependencies are inferred from the claim text.