Method of making defect free silicon islands using SEG
AssigneeInternational Business Machines Corporation
InventorsKlaus D. Beyer, Louis L. Hsu, Dominic J. Schepis, Victor J. Silvestri
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Abstract
A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.
Claims16
A method of forming epitaxial monocrystalline silicon within a region isolated by insulating side walls, comprising the steps of:
- (a) providing a silicon substrate material having a region bounded at least in part by insulated side walls,
- (b) growing an epitaxial crystal of silicon within said region on said substrate, said epitaxial crystal being characterized by a defective surface layer at the interface of the epitaxial crystal and the insulated side walls, and
- (c) replacing at least a portion of said defective surface layer of said epitaxial crystal with an insulating material.
A method of forming in a substrate a substantially defect-free epitaxial grown silicon crystal isolated by dielectric side walls, comprising:
- providing a semiconductor substrate having at least one deep trench having substantially vertical surfaces, said surfaces being covered with a composite dielectric layer of oxide over which a nitride layer is disposed;
- filling said trench with a silicon crystal by selective epitaxial growth on the substrate surfaces;
- selectively removing said nitride thereby forming a gap between said oxide and said crystal;
- and
- thermally oxidizing said crystal to completely fill said gap with oxide.
A method for forming in a substrate a substantially defect-free portion of an epitaxially grown silicon crystal isolated by insulator sidewalls, comprising:
- providing a semiconductor substrate having at least one deep trench having substantially vertical walls coated with an insulator liner;
- filling said trench with a silicon crystal by selective epitaxial growth on the substrate surface;
- forming shallow trenches over each of said walls and including the removal of a portion of the outer layer of the silicon crystal;
- and
- filling said shallow trenches with a dielectric.
A method of forming epitaxial monocrystalline semiconductor within a region isolated by insulating side walls, comprising the steps of:
- (a) providing a semiconductor substrate material having a region bounded at least in part by insulated side walls,
- (b) growing an epitaxial crystal of semiconductor within said region on said substrate, said epitaxial crystal being characterized by a defective surface layer at the interface of the epitaxial crystal and the insulated side walls, and
- (c) replacing at least a portion of said defective surface layer of said epitaxial crystal with an insulating material.
Dependencies are inferred from the claim text.