Y10S 148/005
Antimonides of gallium or indium
Y10S148/005 (Antimonides of gallium or indium) appears on 14 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 14
- Published applications
- 0
- Assignees
- 12
- Inventors
- 30
- Latest grant
- 17 Oct 1995
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Process for fabricating a semiconductor device using dual planarization layers17 Oct 1995US 5,459,096 AMotorola, Inc.
- Low temperature process for producing antimony-containing semiconductor materials4 Jan 1994US 5,275,966 AThe United States of America as represented by the Secretary of the Navy
- Semiconductor device and production method thereof8 Dec 1992US 5,170,230 AFujitsu Limited
- Method of producing a semiconductor device14 Apr 1992US 5,104,825 AFujitsu Limited
- MBE growth technology for high quality strained III-V layers25 Feb 1992US 5,091,335 AThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration
No published applications in this class yet.
Most cited
By later US patents
- Process for fabricating a semiconductor device using dual planarization layers75US 5,459,096 AMotorola, Inc. · 1995
- Ultra-thin semiconductor membranes63US 4,952,446 ACornell Research Foundation, Inc. · 1990
- Deposition of solid semiconductor compositions and novel semiconductor materials28US 3,979,271 AWestinghouse Electric Corp. · 1976
- Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector24US 3,995,303 ABell Telephone Laboratories, Incorporated · 1976
- Intermetallic compound semiconductor thin film and method of manufacturing same11US 4,874,438 AToyo Communication Equipment Co., Ltd. · 1989