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US 5,170,230 AGranted
Semiconductor device and production method thereof
AssigneeFujitsu Limited
InventorMasahiko Takikawa
Life of this patent
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Abstract
A semiconductor device includes an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.
Claims9
A semiconductor device comprising:
- an InP substrate;
- an intrinsic InGaAs channel layer formed on said InP substrate and lattice matched to said InP substrate;
- a first doped GaAs Sb carrier supply layer formed on said intrinsic InGaAs channel layer and lattice matched to said InP substrate;
- an etching stopper layer formed on said first doped GaAsSb carrier supply layer;
- a second doped GaAsSb carrier supply layer formed on said etching stopper layer;
- a first gate electrode having first and second opposite sides, and formed on said second doped GaAsSb carrier supply layer and defining corresponding first and second portions of said doped GaAsSb carrier supply layer;
- and
- a first source electrode and a first drain electrode which are respectively formed on said first and second portions of said second doped GaAsSb carrier supply layer and located adjacent said first and second opposite sides of said first gate electrode.
5 more elements
Dependencies are inferred from the claim text.