US 3,979,271 A · Deposition of solid semiconductor compositions and novel semiconductor materials

Abstract

Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1.sub.-x Si.sub.x, (GaAs).sub.1.sub.-x Ge.sub.x, (InSb).sub.1.sub.-x Si.sub.x, (InSb).sub.1.sub.-x Ge.sub.x, (InAs).sub.1.sub.-x Si.sub.x and (InAs).sub.1.sub.-x Ge.sub.x (where x is a number greater than about 0.01, and x + (1-x) = 1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).

Claims20

Dependent claims

A method of forming a solid semiconductor layer on a substrate comprising the steps of:

A. forming at least one sputter target containing at least one component material selected from the group consisting of Group IIIa-Va and Group IVa-IVa compounds and Group IIIa, Group IVa, and Group Va elements for forming material to be deposited on the substrate;
B. disposing each formed sputter target and a substrate prepared for deposition thereon in a spaced relation in a partial vacuum chamber;
C. introducing into the vacuum chamber a gas mixture containing at least one reactive gas composition containing at least one element selected from the group consisting of Group IIIa, Group IVa and Group Va elements for forming material to be deposited such that the formed sputter target or targets introduced reactive gas composition or compositions are capable of forming all the materials to be deposited on the substrate;
D. sputtering the component material from at least one said sputter target to deposit material on the substrate;
and
E. simultaneously with step D, electrically discharge reacting at least one said reactive gas composition to deposit material on the substrate, and forming on the substrate, with the material deposited by sputtering, said solid layer of semiconductor material.

3 more elements

A method for epitaxially growing a layer of semiconductor material comprising the steps of:

A. forming at least one sputter target containing at least one component material selected from the group consisting of Group IIIa-Va and Group IVa--IVa compounds and Group IIIa, Group IVa and Group Va elements for forming semiconductor material to be grown;
B. disposing each formed sputter target and a substrate prepared for deposition thereon in a spaced relation in a partial vacuum chamber;
C. introducing into the Vacuum chamber a gas mixture containing at least one reactive gas composition containing at least one element selected from the group consisting of Group IIIa, Group IVa and Group Va elements for forming semiconductor material to be grown such that the formed sputter target or targets and introduced reactive gas composition or compositions are capable of forming all the semiconductor material desired in said layer of semiconductor material;
D. sputtering the component material from at least one said target to deposit material on the substrate;
and
E. simultaneously with step D, electrically discharge reacting at least one said reactive gas composition to deposit material on the substrate, and epitaxially growing on the substrate, with material deposited by sputtering, said epitaxial layer of desired semiconductor material.

3 more elements

A method for forming a substantially homogeneous layer of semiconductor material comprising the steps of:

A. forming at least one sputter target containing at least one first component selected from the group consisting of boron, aluminum, gallium, indium, silicon, germanium, boron nitride, aluminum nitride, gallium nitride, indium nitride, boron phosphide, aluminum phosphide, gallium phosphide, indium phosphide, aluminum arsenide, indium arsenide, aluminum antimonide, gallium antimonide, indium antimonide and silicon germanium for forming semiconductor material to be grown;
B. disposing each formed sputter target and a substrate prepared for deposition thereon in a spaced relation in a partial vacuum chamber;
C. introducing into the vacuum chamber a gas mixture containing at least one reactive gas composition containing at least one second component selected from the group consisting of boron, aluminum, gallium, indium, silicon, germanium, nitrogen, phosphorus, arsenic and antimony for forming semiconductor material to be grown such that the formed sputter target or targets and introduced reactive gas composition or compositions are capable of forming all the semiconductor materials to be deposited on the substrate;
D. sputtering the first component from at least one said sputter target to deposit said first component on the substrate;
and
E. simultaneously with step D, electrically discharge reacting at least one said reactive gas to deposit said second component on the substrate and forming on the substrate, with said first component, said substantially homogeneous layer of semiconductor material.

3 more elements

Dependencies are inferred from the claim text.

Deposition of solid semiconductor compositions and novel semiconductor materials

Life of this patent

Deposition of solid semiconductor compositions and novel semiconductor materials

Life of this patent

Abstract

Claims20