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AssigneeToyo Communication Equipment Co., Ltd.
InventorsMasahide Oshita, Masaaki Isai, Toshiaki Fukunaka
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An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.
A method for manufacturing an intermetallic compound semiconductor thin film comprising the steps of:
An intermetallic compound semiconductor thin film comprising a single crystal deposition film of In-Sb having a thickness of from about 0.15 to about 0.6.mu.m, an electron mobility from about 10.sup.4 to about 5.times.10.sup.4 cm.sup.2 /V.sec, and a stoichiometric composition ratio of In to Sb of about 1:1.
An intermetallic compound semiconductor thin film comprising a single crystal deposition film of In-As having a thickness of from about 0.15 to about 0.6.mu.m, an electron mobility from about 10.sup.4 to about 5.times.10.sup.4 cm.sup.2 /V.sec, and a stoichiometric composition ratio of In to As of about 1:1.
Dependencies are inferred from the claim text.