Back to results
US 5,275,966 AGranted
Low temperature process for producing antimony-containing semiconductor materials
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorRobert W. Gedridge, Jr.
Life of this patent
Estimating the term…
Abstract
Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.
Claims12
A process of providing an antimony-containing semiconductor material over a substrate, comprises the steps of:
- directing a flow of one or more source compounds toward the substrate:
- and,
- depositing from said directed flow said semiconductor material over the substrate;
- wherein,
- tri-isopropylantimony is used as a source compound of antimony.
2 more elements
Dependencies are inferred from the claim text.