Y10S 148/008
Bi-level fabrication
Y10S148/008 (Bi-level fabrication) appears on 3 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 3
- Published applications
- 0
- Assignees
- 3
- Inventors
- 5
- Latest grant
- 24 Nov 1992
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same24 Nov 1992US 5,166,082 AOki Electric Industry Co., Ltd.
- Semiconductor device and method for manufacturing the same2 Dec 1986US 4,625,391 ATokyo Shibaura Denki Kabushiki Kaisha
- Fabrication of complementary bipolar transistors and CMOS devices with poly gates10 Nov 1981US 4,299,024 AHarris Corporation
No published applications in this class yet.
Most cited
By later US patents
- Fabrication of complementary bipolar transistors and CMOS devices with poly gates33US 4,299,024 AHarris Corporation · 1981
- Semiconductor device and method for manufacturing the same23US 4,625,391 ATokyo Shibaura Denki Kabushiki Kaisha · 1986
- BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same9US 5,166,082 AOki Electric Industry Co., Ltd. · 1992