Y10S 148/137
Resists
Y10S148/137 (Resists) appears on 39 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 39
- Published applications
- 2
- Assignees
- 23
- Inventors
- 72
- Latest grant
- 25 Nov 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of manufacturing member pattern and method of manufacturing wiring, circuit substrate, electron source, and image-forming apparatus25 Nov 2003US 6,653,232 B2Canon Kabushiki Kaisha
- Method of manufacturing semiconductor device11 Feb 2003US 6,518,196 B2Mitsubishi Denki Kabushiki Kaisha
- Method and structure to reduce latch-up using edge implants15 May 2001US 6,232,639 B1International Business Machines Corporation
- Method and structure to reduce latch-up using edge implants7 Mar 2000US 6,033,949 AInternational Business Machines Corporation
- Method of processing a semiconductor wafer for controlling drive current24 Aug 1999US 5,943,550 AAdvanced Micro Devices, Inc.
Most cited
By later US patents
- High-performance punchthrough implant method for MOS/VLSI110US 5,444,008 AVLSI Technology, Inc. · 1995
- Process for forming sub-micrometer patterns using silylation of resist side walls88US 4,803,181 AInternational Business Machines Corporation · 1989
- Variable thickness self-aligned photoresist process80US 4,231,811 AIntel Corporation · 1980
- Patterning process76US 4,771,017 ASpire Corporation · 1988
- Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers73US 5,066,615 AAT&T Bell Laboratories · 1991