Method of manufacturing semiconductor device

Abstract

The present invention provides a method of manufacturing a semiconductor device that reduces pitch dependence which represents a characteristic that the hole diameter decreases with increasing hole pitch. In the surface of a resist (1) where holes (5a-5e) having pitch dependence are formed, Ar+ ions of an inert gas are vertically implanted, for example, at an energy of 50 keV at a dose of 5.0×1015 cm−2. The ion implantation in the resist (1) shrinks the resist (1) and increases the hole diameters of the holes (5a-5e). At this time, since the hole diameters of the holes (5a-5d) of small hole pitches increase by a smaller amount than the hole diameter of the hole (5e) of a great hole pitch, the pitch dependence of the holes (5a-5e) can be reduced.

Dependencies are inferred from the claim text.