Process for forming sub-micrometer patterns using silylation of resist side walls

Low temperature process for fabricating a line pattern of sub-micron dimensions on a semiconductor body, characterized in that it comprises the steps of:

• depositing a film of the material from which the line pattern is to be formed on the semiconductor body;
• depositing, on said film, a layer of polymeric resist comprising active hydrogen;
• patterning said resist thereby forming a profile having horizontal surfaces and substantially vertical edges;
• silylating the maskless resist by treating said resist with a reactive organometallic silylation solution comprising Xylene, HMCTS and n-Methylpyrrolidone, respectively amounting to 89, 10 and 1 volume %, at a temperature of between 15.degree. and 25.degree. C., thereby replacing the active hydrogens with silicon atoms in the horizontal surfaces and the substantially vertical edges of the resist to a predetermined depth;
• dry etching said resist thereby removing the silylated resist at said horizontal surfaces and, removing the unsilylated resist, leaving the silylated, substantially vertical edges, on said film;
• anisotropically etching said film not covered by said substantially vertical edges of silylated resist;
• and
• removing said silylated resist.

A low temperature process for forming sidewalls on a substrate for use in the fabrication of structures having sub-micron lateral dimensions comprising the steps of:

• depositing on said substrate a layer of polymeric material comprising active hydrogen;
• patterning said polymeric material, said pattern having horizontal surfaces and substantially vertical surfaces;
• forming a sub-micron structure in said horizontal and substantially vertical surfaces of said polymeric material by silylating said material by treating said material with a solution comprising Xylene, HMCTS and n-methylpyrrolidone, respectively amounting to 89, 10 and 1 volume %, at a temperature of between 15.degree. and 25.degree. C., to a predetermined depth;
• and
• etching said polymeric material thereby removing said sub-micron structure in said horizontal surfaces and said polymeric material and whereby said submicron structure formed in said substantially vertical surfaces remains.